Grain Rotation Induced by Electromigration in Pure Tin Strip

博士 === 國立中央大學 === 化學工程與材料工程研究所 === 97 === Electromigration is a generic reliability issue in electronic device and flip chip. Because the tin metal is the common material of solder, we study the effect of tin strip under electromigration. When high current density induced electromigration effect, th...

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Bibliographic Details
Main Authors: YU-CHUNG HSIEH, 謝育忠
Other Authors: Albert T. Wu
Format: Others
Language:zh-TW
Published: 2009
Online Access:http://ndltd.ncl.edu.tw/handle/ax5dg9
Description
Summary:博士 === 國立中央大學 === 化學工程與材料工程研究所 === 97 === Electromigration is a generic reliability issue in electronic device and flip chip. Because the tin metal is the common material of solder, we study the effect of tin strip under electromigration. When high current density induced electromigration effect, the hillocks growth in anode side; the voids growth in cathode side, there are grains rotation phenomenon on tin strip. Change temperature parameter, when current stressing at 100℃ and room temperature, the electromigration effect on tin strip increase with high temperature. Calculate the change of the tin grains rotation angle under various experiment conditions by SEM photo and trigonometric function. We observed the larger grain rotation angle with high current density, however increase experiment temperature, the grain rotation angle smaller. We have kinetic analysis of grain rotation in anisotropic tin under electromigration. From the EBSD data results shown a grain is rotated from a high to a low resistance orientation with respect to the applied current direction.