| Summary: | 碩士 === 國立交通大學 === 顯示科技研究所 === 97 === In this thesis, SRO (silicon rich oxide)/SiO2 multilayer structure was first grown by magnetron sputtering, and then, Si NCs precipitated through high temperature annealing process. By using Fourier transform infrared spectroscopy (FTIR), we identify the formation of Si NCs due to phase separation after high temperature annealing processes. We also focus on the SRO/SiO2 structure on different thermal conditions (RTA (Rapid thermal annealing), Furnace and RTA with Furnace), from thermal condition dependence of photoluminescence (PL) and Raman spectra, RTA with furnace annealing might have a better volume fraction of crystallinity. We also analyze the size dependence of PL and Raman spectra to identify the size of Si nanocrystals.
To study the photovoltaic effect, we first focus on the electrical property of SRO/SiO2 structure, and then we measure the photovoltaic property of SRO/SiO2 structure under illumination.
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