Optical and material properties of GaN/AlGaN quantum wells grown by atomic layer deposition

碩士 === 國立交通大學 === 顯示科技研究所 === 97 === In this thesis, we report the optical and material analysis of GaN/AlGaN quantum well using quasi AlGaN as a barrier layer, which is formed by AlN/GaN super-lattice layers grown with the technique of atomic layer deposition (ALD). In first part, the crystal quali...

Full description

Bibliographic Details
Main Authors: Shih-Ching Mai, 麥仕青
Other Authors: Hao-Chung Kuo
Format: Others
Language:en_US
Published: 2008
Online Access:http://ndltd.ncl.edu.tw/handle/80839607990690552388