Optical and material properties of GaN/AlGaN quantum wells grown by atomic layer deposition
碩士 === 國立交通大學 === 顯示科技研究所 === 97 === In this thesis, we report the optical and material analysis of GaN/AlGaN quantum well using quasi AlGaN as a barrier layer, which is formed by AlN/GaN super-lattice layers grown with the technique of atomic layer deposition (ALD). In first part, the crystal quali...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2008
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Online Access: | http://ndltd.ncl.edu.tw/handle/80839607990690552388 |