Study of Gate-All-Around Poly-Si Nanowire TFTs as Nonvolatile Memory
碩士 === 國立交通大學 === 奈米科技研究所 === 97 === Recently, multiple gate structures has been widely studied to increase channel controlability and to overcome limitations in device scaling down. In past study, Gate-All-Around structure in TFT has been proposed to improve channel controllability, to suppress sho...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/48172143804943371101 |