A Study on the Analysis and Fabrication of Nano Thin Film Transistors by means of Novel Low-Temperature Microwave Annealing Process

碩士 === 國立交通大學 === 電子物理系所 === 97 === In this thesis, we demonstrated a nano thin film transistors with channel length of 80 nm and high performance fabricated at very low temperature at 300℃. We applied a novel low temperature microwave annealing technique to activate the source/drain junction of nan...

Full description

Bibliographic Details
Main Authors: Wan, Chia-Chen, 萬嘉塵
Other Authors: Chao, Tien Sheng
Format: Others
Language:zh-TW
Published: 2009
Online Access:http://ndltd.ncl.edu.tw/handle/29448924091517568944