A Study on the Analysis and Fabrication of Nano Thin Film Transistors by means of Novel Low-Temperature Microwave Annealing Process
碩士 === 國立交通大學 === 電子物理系所 === 97 === In this thesis, we demonstrated a nano thin film transistors with channel length of 80 nm and high performance fabricated at very low temperature at 300℃. We applied a novel low temperature microwave annealing technique to activate the source/drain junction of nan...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2009
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Online Access: | http://ndltd.ncl.edu.tw/handle/29448924091517568944 |