Improvement of High Dielectric Materials and Semiconductor-Insulator Interfaces for Ge and III-V High Performance MOSFETs

博士 === 國立交通大學 === 電子工程系所 === 97 === In this thesis we have extensively investigated the deposition of various high-k dielectric films—including HfOxNy, Al2O3, and Gd2O3—onto the bulk Ge and GaAs substrates and the electrical characteristics of the devices with these developed high-k dielectric films...

Full description

Bibliographic Details
Main Authors: Cheng, Chao-Ching, 鄭兆欽
Other Authors: Chang, Chun-Yen
Format: Others
Language:en_US
Published: 2009
Online Access:http://ndltd.ncl.edu.tw/handle/48874631081493017651