The Role of Oxygen Vacancies and Phase Change in TiN/SiO2/PtFe Resistance nonvolatile Random Access Memories
碩士 === 國立交通大學 === 電子工程系所 === 97 === Recently, since nonvolatile memories acquire a lot of attention and flash memories are facing with the scale limit issue, the next generation nonvolatile memory has been carried out to discover extensively. The resistive random access memories (ReRAMs) that have t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/54011021411886228424 |