Study on high nitrogen concentration oxynitirde as interfacial layer with HfO2 gate dielectric MOSFETs
碩士 === 國立交通大學 === 電子工程系所 === 97 ===
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| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/26056853888720523913 |