Effects of Source and Drain Electrode Types on Bottom Contact Amorphous Indium-Gallium-Zinc-Oxide Thin-Film-Transostors

碩士 === 國立交通大學 === 光電工程系所 === 97 === Via investigating the oxygen and annealing effects, interface property, and source/drain materials, high performance a-IGZO TFT was fabricated. First, the oxygen flow rate was varied to examine oxygen absorption effect. Post-annealing improves the bonding in a-I...

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Bibliographic Details
Main Authors: Wu, Gao-Ming, 吳高銘
Other Authors: Shieh, Han-Ping
Format: Others
Language:en_US
Published: 2009
Online Access:http://ndltd.ncl.edu.tw/handle/28846510627800818106