Analysis of ESD Protection Ability on GaN-Based LEDs
碩士 === 國立成功大學 === 奈米科技暨微系統工程研究所 === 97 === Nitride based light emitting diodes have been successfully fabricated in this investigation. We measured the luminance and electrostatic discharge protection ability of the light emitting diodes. The topics include (a)p-type GaN layer with different growth...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Online Access: | http://ndltd.ncl.edu.tw/handle/r9b29d |