GaN-based metal-oxide-semiconductor devices fabricated by photoelectrochemical process
碩士 === 國立成功大學 === 光電科學與工程研究所 === 97 === In this thesis, Photoelectrochemical Oxidation combined with imprint technique to form a gallium oxide layer on GaN epitaxial layer surface. In this study, we controlled the growth rate of oxide layer by tuning bias voltages, and the quality of oxide layers c...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/38786925413625245009 |