Characterizations of P-side Down GaN-based LEDs
碩士 === 國立成功大學 === 光電科學與工程研究所 === 97 === In this study, the p-side down GaN-based light emitting diodes (LEDs) were grown by metal-organic vapor phase epitaxy (MOVPE). These p-side down LEDs exhibited high operating voltage ( > 4V) and low efficiency. The high operating voltage could be attributed...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/67988183909000765311 |