InGaN-based Materials Applied to Photovoltaic & Photo-Electro-Chemical Devices
碩士 === 國立成功大學 === 光電科學與工程研究所 === 97 === Abstract InGaN-based photovoltaic (PV) devices with GaN/InGaN superlattice absorption layers epitaxially grown on sapphire substrates by metal-organic vapor phase epitaxy techniques are performed to reach band edge absorption at around 445 nm. The stacked...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/05281149852386004533 |