The effects of annealing temperature on the microstructure of nanoindented Cu/Si thin films

• Main Authors: Yu-Liang Chuang, 莊予良
• Other Authors: Woei-Shyan Lee
• Format: Others
• Language: zh-TW
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/45501661645722177065

碩士 === 國立成功大學 === 機械工程學系碩博士班 === 97 === This study explores the affections to Cu/Si film results from annealed temperature. First, make 800 nm depth and 1800 nm depth Cu film separately on (100) Si wafer in the experiment. And use electron beam lithography system, EBL to sculpt one matrix image on the film. The matrix image is developed by our laboratory previously, and the purpose is when we use OM and SEM, we can quickly find where the indentation is by the way constructing coordinates by pictures of matrix image. Then, we use nanoindenter-XP (MTX-XP) to measure film hardness and Young’s modulus, and make a tiny damage on the surface simultaneously. After indentation testing. use Rapid thermal annealing, RTA whichs temperatures are raised to 160℃ and 210℃ separately and keep their temperatures for ten seconds, in order to compare under the conditions of no heating and heating differently, the affections to Cu/Si film results from annealed temperature . The measuring results of nanoindenter shows that：The curves tendency of those mechanical characters are affected by indentation size effect and surface roughness for indentation depths of less than 50 nm, and by the substrate effect for the indenter near the substrate. The hardness and Young’s modulus of the 800 nm Cu film chip are measured as 2.64 GPa and 142.27 GPa respectively. The hardness and Young’s modulus of the 1800 nm Cu film chip are measured as 0.82 GPa and 90 GPa respectively. On the aspect of microstructural, after Cu/Si film dealed with nanoindenter and annealing，the area which is affected directly by indentation become amorphous or the mixed phase of polycrystal and amorphous from single-crystal Si 。Generally speaking, when annealing temperture is higher, the area which is affected directly by indentation shows more the mixed phase of polycrystal and amorphous. The deformation and slip are happened by the area beside the indentation affected zone. The silicon outside of the deformation area is still preserve the appearance of single-crystal Si。The copper silicide is found at the 800 nm Cu chip annealed at 160 and 210 ℃ and 1800 nm Cu chip annealed at 210 ℃. Besides, according to EDS, we can know that the quantity of Cu in indentation affected zone is more than around. Thus, we can interpret that the indentation is conducive to diffusion。