The Study of E-beam Inspection Application for Nano CMOS Technology Process Development and Excursion Monitor

• Main Authors: Hsin-ming Teng, 鄧炘明
• Other Authors: Yean-kuen Fang
• Format: Others
• Language: en_US
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/55881957911311379877

碩士 === 國立成功大學 === 電機工程學系專班 === 97 === The IC process shrink into deep sub-micron regime, metal film changes from Al to Cu process. The Cu film can’t etch by physical or chemical process to form gas or liquid phase and exhaust from reaction chamber. There are many new issues happen in Cu damascene process such as Cu CMP process (chemical-mechanical polish) that can’t monitor the abnormal excursion both in research-development (RD) or mass production by conventional wafer inspection system including bright-field (BF) and dark-field (DF) tool. Because of the BF and DF tool can detect the defects or abnormal cases only on wafer surface due to their characteristics. We implement e-beam wafer inspection system to catch the abnormal cases underneath the Cu surface in damascene process. Through the SEM (scanning electron microscope) gun column condition optimization that including electron field adjustment for different kind of wafer surface condition, we can get the electron signal from collector to identify the defect site. It will save much time for analyze the process issue and time-to-result both in RD and production stage. This thesis will introduce the wafer e-beam inspection tool and principles. Discuss with real application cases result both in 90nm back-end (BE) process development and 65nm front-end (FE) production monitoring. We will describe related future industrial trend and challenges in last chapter.