The study of HfOx and ZrOx thin film Application to GaN Optoelectronic Devices
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 97 === In this thesis, the high-k insulators including HfO2 and ZrO2 were deposition on GaN substrates. The GaN had grown by metal organic vapor phase epitaxy (MOCVD) and dielectrics were deposited on GaN substrate by RF-sputter in this study. In the insulator mate...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/43012498117367310861 |