Fabrication and Investigation of P-GaN MOSFETs with Gate Dielectrics Grown Using Bias-Assisted PEC Oxidation Method
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 97 === In integrated circuits, the complementary metal-oxide-semiconductor (CMOS) device is an important component and consisted of n-MOSFETs and p-MOSFETs. For fabricating high performance GaN-based integrated circuits, it is a key issue to fabricate high performa...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/07609776113118184894 |