Characterization of the Cross-section Microstructure of Pulse Electroplaing Cu

碩士 === 國立成功大學 === 材料科學及工程學系碩博士班 === 97 ===  The performance of aluminum interconnection in chips was not enough because of those electronics products getting thinner and smaller. The efficiency and development will be limited through interconnections. when the size of aluminum inter connects are sma...

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Main Authors: Kai-wen Tang, 湯凱文
Other Authors: Jui-chao Kuo
Format: Others
Language:zh-TW
Published: 2009
Online Access:http://ndltd.ncl.edu.tw/handle/81165098895496457626
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spelling ndltd-TW-097NCKU51590192016-05-04T04:17:07Z http://ndltd.ncl.edu.tw/handle/81165098895496457626 Characterization of the Cross-section Microstructure of Pulse Electroplaing Cu 脈衝電鍍銅的橫截面微結構及其特性 Kai-wen Tang 湯凱文 碩士 國立成功大學 材料科學及工程學系碩博士班 97  The performance of aluminum interconnection in chips was not enough because of those electronics products getting thinner and smaller. The efficiency and development will be limited through interconnections. when the size of aluminum inter connects are smaller than 1μm, its RC value will increase obviously. Copper interconnect was developed for replacing aluminum. To raise the performance of small chip, multi-layer chips process has been developed. The problems of heat dissapitation, weight and cost addition will be solved if multi-level chips could use copper wires to support one another directly.  Like other high conductivity metals, the strength is not enough in copper’s composition. Even strengthening mechanisms can increase the strength of metal, it will violently increase electron scatter causing the poor conductivity. Using pulse electrodepositions can produce high nanometer twin pure copper samples which comprise high strength and high conductivity.  In this study, we modified the current density of PED, analyzed samples by EBSD and XRD, then observed the film of copper samples which prepared through different current densities, and compared each sample’s grain size and twin density. In addition, this study successfully analyzed unpolished morphology OIM of the film of copper by EBSD, and observed the grain shape and orientation of the cross- sectional in copper films. Increasing the current density didn’t make the grain size in the surface of film become small like we have expected. Moreover, it didn’t make have any influences in common of twin density. The orientation on film surface concentrated toward direction 111 and 101. Most of grain size and orientation of cross-section developed huge columnar grains toward some specific directions. Jui-chao Kuo 郭瑞昭 2009 學位論文 ; thesis 118 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立成功大學 === 材料科學及工程學系碩博士班 === 97 ===  The performance of aluminum interconnection in chips was not enough because of those electronics products getting thinner and smaller. The efficiency and development will be limited through interconnections. when the size of aluminum inter connects are smaller than 1μm, its RC value will increase obviously. Copper interconnect was developed for replacing aluminum. To raise the performance of small chip, multi-layer chips process has been developed. The problems of heat dissapitation, weight and cost addition will be solved if multi-level chips could use copper wires to support one another directly.  Like other high conductivity metals, the strength is not enough in copper’s composition. Even strengthening mechanisms can increase the strength of metal, it will violently increase electron scatter causing the poor conductivity. Using pulse electrodepositions can produce high nanometer twin pure copper samples which comprise high strength and high conductivity.  In this study, we modified the current density of PED, analyzed samples by EBSD and XRD, then observed the film of copper samples which prepared through different current densities, and compared each sample’s grain size and twin density. In addition, this study successfully analyzed unpolished morphology OIM of the film of copper by EBSD, and observed the grain shape and orientation of the cross- sectional in copper films. Increasing the current density didn’t make the grain size in the surface of film become small like we have expected. Moreover, it didn’t make have any influences in common of twin density. The orientation on film surface concentrated toward direction 111 and 101. Most of grain size and orientation of cross-section developed huge columnar grains toward some specific directions.
author2 Jui-chao Kuo
author_facet Jui-chao Kuo
Kai-wen Tang
湯凱文
author Kai-wen Tang
湯凱文
spellingShingle Kai-wen Tang
湯凱文
Characterization of the Cross-section Microstructure of Pulse Electroplaing Cu
author_sort Kai-wen Tang
title Characterization of the Cross-section Microstructure of Pulse Electroplaing Cu
title_short Characterization of the Cross-section Microstructure of Pulse Electroplaing Cu
title_full Characterization of the Cross-section Microstructure of Pulse Electroplaing Cu
title_fullStr Characterization of the Cross-section Microstructure of Pulse Electroplaing Cu
title_full_unstemmed Characterization of the Cross-section Microstructure of Pulse Electroplaing Cu
title_sort characterization of the cross-section microstructure of pulse electroplaing cu
publishDate 2009
url http://ndltd.ncl.edu.tw/handle/81165098895496457626
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