| Summary: | 碩士 === 國立成功大學 === 材料科學及工程學系碩博士班 === 97 === The performance of aluminum interconnection in chips was not enough because of those electronics products getting thinner and smaller. The efficiency and development will be limited through interconnections. when the size of aluminum inter connects are smaller than 1μm, its RC value will increase obviously. Copper interconnect was developed for replacing aluminum. To raise the performance of small chip, multi-layer chips process has been developed. The problems of heat dissapitation, weight and cost addition will be solved if multi-level chips could use copper wires to support one another directly.
Like other high conductivity metals, the strength is not enough in copper’s composition. Even strengthening mechanisms can increase the strength of metal, it will violently increase electron scatter causing the poor conductivity. Using pulse electrodepositions can produce high nanometer twin pure copper samples which comprise high strength and high conductivity.
In this study, we modified the current density of PED, analyzed samples by EBSD and XRD, then observed the film of copper samples which prepared through different current densities, and compared each sample’s grain size and twin density. In addition, this study successfully analyzed unpolished morphology OIM of the film of copper by EBSD, and observed the grain shape and orientation of the cross- sectional in copper films. Increasing the current density didn’t make the grain size in the surface of film become small like we have expected. Moreover, it didn’t make have any influences in common of twin density. The orientation on film surface concentrated toward direction 111 and 101. Most of grain size and orientation of cross-section developed huge columnar grains toward some specific directions.
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