Study on the Characteristics of Amorphous SiliconThin Film Transistors under different RF PlasmaTreatment
碩士 === 國立中興大學 === 電機工程學系所 === 97 === Although the BCE-type TFTs of bottom-gate have the advantage of more easier procedure, but the channel is exposed to the dry etching of high energy plasma, which would destroy the a-Si:H bonding in the channel causing lower on current、higher leakage current and w...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/91936517142201754974 |