Micro pressure sensor with wireless transmission circuits

碩士 === 國立中興大學 === 機械工程學系所 === 97 === Wireless micro pressure sensors were manufactured using the standard 0.35 μm CMOS (complementary metal oxide semiconductor) process and a post-CMOS process. In this study, two different pressure sensors were designed, capacitive and FET (field effect transistor)...

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Bibliographic Details
Main Authors: Po-Wei Lu, 呂柏緯
Other Authors: 戴慶良
Format: Others
Language:zh-TW
Online Access:http://ndltd.ncl.edu.tw/handle/69900116715667200737