Research on Material Properties of SiGe Epitaxial Thin Film and Fabrication of SiGe Nanostructures
博士 === 國立中興大學 === 機械工程學系所 === 97 === This study presents the variations of material properties of SiGe epitaxial thin films at different annealing temperatures. The SiGe samples were deposited by ultrahigh vacuum chemical vapor deposition (UHVCVD) system. Various techniques, including high-resolutio...
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| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/95248313592298176597 |