Study on the Fabrication of a-Si:H Thin Film Solar Cell under Different Radio Frequency and Hydrogen Flow Rate

碩士 === 國立中興大學 === 光電工程研究所 === 97 === In this thesis, thin films are deposited by plasma enhanced chemical vapor deposition (PECVD) under pressure 1torr and at temperature 350℃ with RF power 20W. We investigate the characteristics of thin films with various H2 diluted ratio of silane from 0 to 100 un...

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Bibliographic Details
Main Authors: Yu-Lun Huang, 黃昱綸
Other Authors: 劉漢文
Format: Others
Language:en_US
Online Access:http://ndltd.ncl.edu.tw/handle/10844839741197401050