Trend Shift of Degradation Mechanisms of Various Annealing CLC Poly-Si n-TFTs under DAHC Stress and Temperature Enhancement
碩士 === 明新科技大學 === 電子工程研究所 === 97 === Polycrystalline silicon TFTs （Poly-Si TFT） propose the higher electron mobility, therefore, the hot-carrier effect under the high-voltage operation is still a device reliability issue. In this study, the drain-avalanche hot-carrier （DAHC） effect plus temperatu...
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| Format: | Others |
| Language: | zh-TW |
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2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/74811396136410802583 |