The study on characteristic of doped nitrogen diamond-like carbon films by MPCVD

• Main Authors: Yan-Ru Hung, 洪演儒
• Other Authors: Chung-Ming Liu
• Format: Others
• Language: zh-TW
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/50589982366455586465

碩士 === 龍華科技大學 === 工程技術研究所 === 97 === This research studied nitrogen doped DLC (Diamond like carbon) film on the silicon wafer by MPCVD, at different parameters such as: substrate temperature, gas flow rate, and microwave power. The quality of DLC films was analyzed by the Scanning electron microscope, the Raman spectrometer, the Vickers hardness, and the Contact angle. The surface morphology of DLC is affected by the substrate temperature and microwave power. The quality of DLC films were grown with constant : substrate temperature and microwave power. The DLC growth is also affected by the addition of nitrogen. The Raman spectrum peaks are dependent on the addition of nitrogen. Furthermore, DLC-growth films have not been shown as no DLC Raman peaks and less hydrophobicity.