First-Principle Investigation on Oxygen Vacancy in High-K Dielectric Materials
碩士 === 國立高雄應用科技大學 === 電子工程系 === 97 === Recently, the thickness of gate oxide made from SiO2 in nano-scale MOSFET has reached a physical limit according to the current leakage. The High-K dielectric materials have been found to be a good solution to the problem. However, there is a tradeoff between t...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/18940294968448298313 |