Characterization of Ga doped ZnO nanostructures synthesized by vapor phase transport process

碩士 === 國立高雄應用科技大學 === 電子工程系 === 97 === The morphologie, electrical, optical, and magnetic properties of ZnO nanostructures can be effectively modified by doping with group III elements or group VII elements. In general, group III elements such as Al, In and Ga and group VII elements such as Br, Cl...

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Bibliographic Details
Main Authors: Cheng-Hsun Tsai, 蔡政勳
Other Authors: Su-Hua Yang
Format: Others
Language:en_US
Published: 2009
Online Access:http://ndltd.ncl.edu.tw/handle/72200010889912484483