The optical and structural study of InGaN/GaN MQWs in different well thickness
碩士 === 義守大學 === 電子工程學系碩士班 === 97 === Light-emitting diodes with a low power, long life and fast response speed, at present the nitride of Ⅲ-Ⅴ group research for the most enthusiastic InGaN is a direct gap material, which has 3.4ev energy gap belonging to the ultraviolet range of blue. The blue light...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/16517852066601286516 |