Studies of Metal Ohmic-Contact Layer on GaP Window Layer in AlGaInP Light-Emitting Diodes

碩士 === 義守大學 === 電子工程學系碩士班 === 97 === With the development of AlGaInP-based light-emitting diodes (LEDs) in the past year, indium-tin-oxide (ITO) has been widely applied as a transparent current spreading layer due to its high transparency and low electrical resistively. In this study, an AlGaInP mul...

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Bibliographic Details
Main Authors: Nan-yi Huang, 黃南議
Other Authors: Chong-yi Lee
Format: Others
Language:zh-TW
Published: 2009
Online Access:http://ndltd.ncl.edu.tw/handle/32871546090581452925