Effects of Plasma or Thermal Annealing Treatment on Nonvolatile Memory Devices
碩士 === 逢甲大學 === 電子工程所 === 97 === In the TaN/SiO2/HfO2/SiO2/Si structure, the HfO2 charge storage layer was treated by H2 or NH3 plasma treatment for 3 minutes. The power of the plasma treatment is 200 watt and the gas flow is 200 sccm.The results indicate the direction of C-V hysteresis curve is cou...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/45297835640800175907 |