Investigations on Al0.2Ga0.8As/In0.2Ga0.8As δ-pHEMT with a Transparent AZO Gate
碩士 === 逢甲大學 === 電子工程所 === 97 === This work reports, a transparent Aluminum-doped zinc oxide (AZO) gate material deposited on AlGaAs/InGaAs δ-doped pseudomorphic high electron mobility transistors have been prepared by RF reactive magnetron sputtering system from an AZO target was prepared by mixing...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/53994451847737683806 |