Study of Ohmic Contact to N-type GaAs substrate with Multi-layered Gold-contained structure
碩士 === 中原大學 === 電子工程研究所 === 97 === Abstract Gallium Arsenic (GaAs) applications to devices have become increasingly critical due to the requirement for global communication industrial growth. In general, GaAs devices have the merit of the higher electric mobility than that of Si devices, fast switch...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2009
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/37224798483223554963 |