Surface treatment and leakage behavior of AlGaN/GaN High Electron Mobility Transistors
博士 === 長庚大學 === 電子工程學研究所 === 97 === Abstract In recently years, the commercial outlook for GaN optoelectronic and electronic devices has grown considerably. GaN-based transistors, such as AlGaN/GaN high electron mobility transistors, are capable of delivering the high-powe...
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| Format: | Others |
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2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/49861070422929246147 |