Development of High-k Tb2O3 Dielectrics for Low-Temperature TFTs Applications
碩士 === 長庚大學 === 電子工程學研究所 === 97 === In this work, we deposit Poly-Si channel by SPC crystal system, we utilize high κ value material terbium oxide to form the gate dielectric of the low temperature poly-Si thin film transistors by sputter system, and use TaN as its gate electrode. Compare to the con...
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| Format: | Others |
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2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/37967154548169995211 |