GaN Lattice Matched ZnO Film as GateDielectric Oxide Layer for AlGaN/GaN Switch Application
碩士 === 長庚大學 === 電子工程學研究所 === 97 === Zn films replacement materials have been demonstrated as the gate dielectric materials in AlGaN/GaN HEMT. The dielectric constant of and ZnO are about 8.17 which provide a high channel control ability in FET.In this study. It exhibits prolonged turn-on voltage and...
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| Format: | Others |
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2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/95079568655685928478 |