Study of High-k Materials as Trapping Layer Combined with Rapid Thermal Annealing for Nonvolatile Memory Application
碩士 === 長庚大學 === 電子工程學研究所 === 97 === In this paper, we use high-k dielectric material as flash memory charge trapping layer. The high dielectric coefficient material, Titanium and Hafnium intermix with Titanium and Tantalum using sputtering to form metal oxide charge trapping layer. Meanwhile, we dis...
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| Format: | Others |
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2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/75192360131549330508 |