Investigation of High Quality GaN Film Grown on Boron-implanted Silicon Substrate
碩士 === 長庚大學 === 光電工程研究所 === 97 === This thesis investigated the improvement of lattice mismatch and crystal quality of the GaN film which dependant on results of experiment measurement. The boron-implanted Si substrates were treated with various annealing temperatures before growing GaN film grown o...
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| Format: | Others |
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2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/47080948775607571979 |