Fabrication ZnO transparent thin film transistor using high dielectric constant Gd2O3 as gate insulator
碩士 === 長庚大學 === 光電工程研究所 === 97 === Abstract Developments of the transparent electronic circuits have been interested in most of researches to create new optoelectronic devices and applications. Among them the transparent field-effect transistor (FET) is a key device for realizing transparent circuit...
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| Format: | Others |
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2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/16333640452274744504 |