| Summary: | 碩士 === 國立中正大學 === 電機工程所 === 97 === As the evolution of semiconductor proceeds, MOSFETs gate oxide thickness and dimensions of scale shrink in circuit design. Reliability problems occur and need to be considered early in the design step. Because temperature is the critical factor of reliability problems, the main purpose of this thesis is to develop a circuit for adjusting temperature and replacing the damaged switching device. The circuit adjusts the temperature without inducing excess switching loss as main switching device overheats. In addition, when the main device is damaged, a backup device will completely take over the function of this main device, keeping the normal operation of this system. The indicator light will turn on for the purpose of replacing the damaged device. The temperature adjustment and failure detecting circuit has been built, from which experimental measurement has verified the feasibility of this proposed system.
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