Temperature Adjustment and Failure Detection circuits
碩士 === 國立中正大學 === 電機工程所 === 97 === As the evolution of semiconductor proceeds, MOSFETs gate oxide thickness and dimensions of scale shrink in circuit design. Reliability problems occur and need to be considered early in the design step. Because temperature is the critical factor of reliability probl...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/29544789094914180535 |