A Case Study of Memory Device ESD (Electrostatic Discharge)Circuit Failure Analysis
碩士 === 元智大學 === 化學工程與材料科學學系 === 96 === Device reliability is getting worse since the thickness of gate oxide is getting thinner, and the Integrated Circuits (ICs) are much more easily to be damaged comparing with the devices fabricated before. This thesis is to investigate a SRAM (Static Random Acce...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/80186024986097191240 |