| Summary: | 碩士 === 國立臺北科技大學 === 資源工程研究所 === 96 === The aerosol deposition method is utilized to deposit Ba2Ti9O20 (B2T9) thick film on the Pt/Ti/Si substrate at room temperature. The efficiency of this method is high and the 2-dimensional pattern can be established directly. Through the control of various kinds of carrier gases and annealing parameters, the influence of processing parameters on the phase components , dielectric properties and microstructures of the Ba2Ti9O20 thick film are investigated in this study.
The results show that the composition and crystal structures of the thick film do not change with differing carrier gas, however, the width of peaks on XRD traces are broader than that in raw powder. From cross-sectional SEM image analysis, the Ba2Ti9O20 films are found to be dense. High dielectric constant and good voltage stability can be obtained from the measurements of electrical properties. Dielectric constant increased with decreasing oxygen partial pressure of carrier gas. Dielectric constant of Ba2Ti9O20 thick film prepared by O2 was 32 and dielectric loss was 0.03. Dielectric constant of Ba2Ti9O20 thick film prepared by Ar was 41 and dielectric loss was 0.04. Leakage density were 1.4×10-8 and 3.9×10-11 A/cm2 for Ba2Ti9O20 film prepared by O2 and Ar.
The results show that the composition and crystal structures of the thick films do not change with changing annealing temperatures. Dielectric constant and leakage density increased with increased annealing temperatures. Dielectric constant and leakage density of Ba2Ti9O20 thick films do change with changing annealing atmospheres.
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