The Investigation on Subthreshold Behavior Model for Fully Depleted Dual Material Gate SOI MOSFETs
碩士 === 南台科技大學 === 電子工程系 === 96 === Based on the exact resultant solution of two dimensional Poisson’s equation, a new two-dimensional model including surface channel potential, electric field, threshold voltage and subthreshold current for the fully depleted dual material gate (FDDMG) SOI MOSFET’s h...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/27155994218150772408 |