Fabrication and Characterization of p-GaN/Transparent Conducting Oxides Ultraviolet Photodetectors
碩士 === 南台科技大學 === 光電工程系 === 96 === In this study, indium tin oxide(Ni-ITO)、zinc oxide(ZnO)、Aluminum-doped zinc oxide(AzO) films were deposited on double-polished sapphire by magnetron sputtering. After the deposition, the thin films were then thermally annealed(Furnace and RTA) in nitrogen ambient t...
Main Authors: | ping-fung chi, 紀秉夆 |
---|---|
Other Authors: | Ming-Lun Lee |
Format: | Others |
Language: | zh-TW |
Published: |
2008
|
Online Access: | http://ndltd.ncl.edu.tw/handle/13889785989627039654 |
Similar Items
-
The Fabrication of GaN Ultraviolet Photodetectors with Organic Materials
by: Ming-Han Yang, et al.
Published: (2014) -
Fabrication and Characterization of AlGaN/GaN PIN Ultraviolet Photodetectors
by: Yu-Hua Huang, et al. -
The Fabrication of GaN Ultraviolet Photodetectors with a Magnesium Fluoride Insulating Layer
by: Wei-Chi Lin, et al.
Published: (2014) -
Improved AlGaN/GaN Ultraviolet Photodetectors by Oxidation Techniques
by: Yi-HsuanWang, et al.
Published: (2014) -
Study of GaN MOS Ultraviolet Photodetector
by: Yuag-Yi Yang, et al.
Published: (2005)