| Summary: | 碩士 === 聖約翰科技大學 === 自動化及機電整合研究所 === 96 === Sputtering thin films become an important technology because of its performance in wide engineering applications. However, residual stresses induced in the deposition processes sufficiently affect the thin film performance. In this work, residual stresses of multilayer thin films are studies. A 200 nm thickness Ti thin film is deposited on a silicon wafer with various substrate temperatures 25, 50, 75, 100, 125, and 150 ℃, respectively. The Ni/Ti multilayer thin film is overlapped a 200 nm Ni thin film on the Ti thin film with 25 ℃ substrate temperature. The residual stresses are measured by both grazing incident X-ray diffraction and substrate curvature method. For Ti thin films, the result shows that the residual stress decreases as the substrate temperature increases, in which the stress changes form tensile to compressive when the substrate temperature increases form 25 to 50 ℃. For Ni/Ti multilayer thin films, the residual stresses of Ti are increased by the additional Ni thin film. In summary, residual stresses of thin films sensitively depend on the deposition parameters and sufficiently affect the hardness and elastic modulus measured by nanoindentation.
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