| Summary: | 碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 96 === CIGS precursors are deposited on Mo glass by Physical Vapor Deposition (PVD) at low temperature(250〜300℃), put it in RTA tube to proceed Rapid Thermal Processing(RTP), and form Chalcopyrite thin film. Without Se vapor and H2Se, the RTP of experimentation forms Chalcopyrite in variety of temperature and analyses its characteristic.
The Cu2Se and (In,Ga)2Se3 precursors which are deposited from this experimentation and distinguish thin films between Cu-rich and Cu-poor by ratio of thickness. We discover that the grain size increases as temperature increases. The thin films have CIGS (112) preferred orientation during the process of heating. The Cu-Se layer diffused faster than In-Ga-Se layer, and grain size is bigger than In-Ga-Se layer. The surface of Cu-poor has desorbing In-Ga-Se layer under thermal treatment of high temperature and long time. Thin films of Cu-rich still appear Cu2Se (400) preferred orientation at thermal treatment of high temperature. However, the thin films of two kinds appear such oxides as Cu-O and In-O under thermal treatment of high temperature and long time. This remaining oxygen reacts with thin films in RTA tube. Finally, we receive a result that thermal treatment of 600℃/10 min is the best parameter under environment of without Se vapor and H2Se.
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