Investigation and analysis of Chalcopyrite thin films prepared by PVD to deposit Cu(In,Ga)Se2 precursor and Rapid Thermal Processing
碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 96 === CIGS precursors are deposited on Mo glass by Physical Vapor Deposition (PVD) at low temperature(250〜300℃), put it in RTA tube to proceed Rapid Thermal Processing(RTP), and form Chalcopyrite thin film. Without Se vapor and H2Se, the RTP of experimentation for...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/33a7y3 |