A study for ZnO photodectors fabricated on flexible
碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 96 === Zinc oxide is a II-VI semiconductor material with direct band-gap of 3.37 eV corresponding to the wavelength in the ultraviolet region. ZnO also has large exction binding energy (~60 meV). In addition, ZnO has low resistivity and high transparency in the vis...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2008
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| Online Access: | http://ndltd.ncl.edu.tw/handle/c4r8s3 |