| Summary: | 碩士 === 國立高雄大學 === 電機工程學系碩士班 === 96 === In this thesis, we demonstrate the pulse laser deposition (PLD) of zirconium tin titanium oxide Zr0.8Sn0.2TiO4 (ZST) thin film on p-type Si(100) substrate by KrF Excimer Laser at room temperature. Deposition rate of ZST thin film at 0.3 Å/pulse has been achieved with laser fluences of 1500 mJ/cm2. Investigate the characteristics of using ZST Metal-Insulation-Semiconductor (MIS) device, which can provide photo detection by generating electron-hole pairs in the depletion region between the interface of ZST thin film and Si substrate.
X-ray diffraction (XRD), Raman spectroscopy, and scanning electron
microscopy (SEM), atomic force microscope (AFM) are used to study the effect of
the crystalline properties of the deposited films with various process parameters; such as laser fluence and annealing temperature. UV-Vis spectroscopy is used to characterize the optical properties of the deposited ZST films. In addition, I-V and C-V measurements were used to characterize the dielectric performance of the deposited ZST film in a simple MIS device. We used to study the effect of photo-responsivity of the MIS device are presented. These results will provide reference for developing the Si-based photo-detector in the future.
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