The Fabrication of the Porous SOG Thin Film and Its Application in Photodetectors
碩士 === 國立高雄大學 === 電機工程學系碩士班 === 96 === Porous thin film has been widely applied in high speed device system due to its low k constants and novel optical properties. In this thesis, we demonstrate a SOG process with Sol-Gel method and the fabrication of a MIS device using porous SOG thin film as the...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/xp2bk7 |
| Summary: | 碩士 === 國立高雄大學 === 電機工程學系碩士班 === 96 === Porous thin film has been widely applied in high speed device system due to its low k constants and novel optical properties. In this thesis, we demonstrate a SOG process with Sol-Gel method and the fabrication of a MIS device using porous SOG thin film as the insulating layer. Atomic force microscopy (AFM) and Reflection/Transmission spectroscopy have used to study the effect of curing temperature in SOG process to the variation of porous size and index of reflection. We find the higher curing temperature the bigger porous size are. The measurement of I-V C-V and responsivity characteristics, we can derive higher light current and responsivity because of higher light transmittance by Using Al/porous SOG/Si MIS device. We also can enhance efficiency of photo-detector.
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